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Chemical Vapor Deposition Spain conductive Hexylthiophene silicon_oxide Domain IndiumTinOxide TungstenDeposition PetruPoni Conductance CVD PANI LiftMode self-assembly MechanicalProperties CP-AFM UTEM Tape PolyimideFilm Titanate SingleCrystal HBN FM_KPFM LFM TungstenThinFilmDeposition alkanes gallium_nitride Polyethylene Graphite DomainSwitching Liquid ScanningTunnelingMicroscopy Tapping hard_disk KAIST
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Taegeuk Mark Lithography on PZT
Re-arranged the domain pole direction on PZT surface using bias mode of lithography.
Scanning Conditions
- System: NX10
- Scan Mode: Lithography
- Cantilever: PPP-ContScPt (k=0.2N/m, f=25kHz)
- Scan Size: 35μm×20μm
- Scan Rate: 0.5Hz
- Pixel Size: 1024 × 1024
- Tip Bias: 10V for patterned area
- Scan Mode: Lithography
- Cantilever: PPP-ContScPt (k=0.2N/m, f=25kHz)
- Scan Size: 35μm×20μm
- Scan Rate: 0.5Hz
- Pixel Size: 1024 × 1024
- Tip Bias: 10V for patterned area