-
silicon_oxide Singapore ChemicalCompound temp PDMS Mosfet PhaseTransition dichalcogenide PtfeMembrane MESA structure HanyangUniv EPFL medical Polytetrafluoroethylene Gold Pores Conductive AFM hard_disk Electrode epitaxy KelvinProbeForceMicroscopy sputter GalliumPhosphide PvdfBead SiliconeOxide fluoroaalkane MechanicalProperty SThM PinPointMode SurfaceChange SICM TiO2 Stiffness hetero_structure DentalProsthesis
Report image
If you found this image unacceptable, please let us know. We will review your report and take action if we determine this image is really unacceptable.
Semiconductor device, W-plug
Scanning Conditions
- System: NX10
- Scan Mode: Conductive AFM
- Cantilever: ElectriMulti75-G (k=3N/m, f=75kHz)
- Scan Size: 2μm×1μm
- Scan Rate: 0.3Hz
- Pixel: 512×256
- Sample bias: +1V